Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Surface Mount | YES |
Number of Pins | 6 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2006 |
Series | Automotive, AEC-Q101, TrenchMOS™ |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
Additional Feature | LOGIC LEVEL COMPATIBLE |
Max Power Dissipation | 500mW |
Terminal Form | FLAT |
Pin Count | 6 |
Number of Elements | 2 |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 330mW |
Turn On Delay Time | 13 ns |
FET Type | 2 P-Channel (Dual) |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 7.5 Ω @ 100mA, 10V |
Vgs(th) (Max) @ Id | 2.1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 36pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 0.35nC @ 5V |
Rise Time | 11ns |
Drain to Source Voltage (Vdss) | 50V |
Fall Time (Typ) | 25 ns |
Turn-Off Delay Time | 48 ns |
Continuous Drain Current (ID) | 170mA |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | -50V |
Drain Current-Max (Abs) (ID) | 0.17A |
Drain-source On Resistance-Max | 8.5Ohm |
Drain to Source Breakdown Voltage | -50V |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
FET Feature | Logic Level Gate |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |