Parameters | |
---|---|
Vgs(th) (Max) @ Id | 2.1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 36pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 150mA Ta |
Gate Charge (Qg) (Max) @ Vgs | 0.35nC @ 5V |
Rise Time | 11ns |
Drain to Source Voltage (Vdss) | 50V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 25 ns |
Turn-Off Delay Time | 48 ns |
Continuous Drain Current (ID) | 150mA |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | -50V |
Drain to Source Breakdown Voltage | -50V |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mounting Type | Surface Mount |
Package / Case | SC-70, SOT-323 |
Surface Mount | YES |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2011 |
Series | Automotive, AEC-Q101, TrenchMOS™ |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Resistance | 7.5Ohm |
Additional Feature | LOGIC LEVEL COMPATIBLE |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Pin Count | 3 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 260mW Ta 830mW Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 260mW |
Turn On Delay Time | 13 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 7.5 Ω @ 100mA, 10V |