BST52,135
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2001 |
| Series | Automotive, AEC-Q101 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Max Power Dissipation | 1.3W |
| Terminal Form | FLAT |
| Base Part Number | BST52 |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-F3 |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Power - Max | 1.3W |
| Transistor Application | SWITCHING |
| Transistor Type | NPN - Darlington |
| Collector Emitter Voltage (VCEO) | 80V |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 500mA 10V |
| Current - Collector Cutoff (Max) | 500nA |
| Vce Saturation (Max) @ Ib, Ic | 1.3V @ 500μA, 500mA |
| Collector Emitter Breakdown Voltage | 80V |
| Transition Frequency | 200MHz |
| Collector Emitter Saturation Voltage | 1.3V |
| Max Breakdown Voltage | 80V |
| Frequency - Transition | 200MHz |
| Collector Base Voltage (VCBO) | 90V |
| Emitter Base Voltage (VEBO) | 5V |
| Turn On Time-Max (ton) | 400ns |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
