BST82,235
| Parameters | |
|---|---|
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 40pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 190mA Ta |
| Drive Voltage (Max Rds On,Min Rds On) | 5V |
| Vgs (Max) | ±20V |
| Continuous Drain Current (ID) | 190mA |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 100V |
| Drain Current-Max (Abs) (ID) | 0.175A |
| Drain to Source Breakdown Voltage | 100V |
| Feedback Cap-Max (Crss) | 6 pF |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 1997 |
| Series | TrenchMOS™ |
| JESD-609 Code | e3 |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| HTS Code | 8541.21.00.95 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 830mW Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 830mW |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 10 Ω @ 150mA, 5V |
See Relate Datesheet
