Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 6-VSSOP, SC-88, SOT-363 |
Number of Pins | 6 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2000 |
Series | OptiMOS™ |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Additional Feature | AVALANCHE RATED |
Voltage - Rated DC | -20V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Current Rating | -1.5A |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 560mW Ta |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 560mW |
FET Type | P-Channel |
Rds On (Max) @ Id, Vgs | 175m Ω @ 1.5A, 4.5V |
Vgs(th) (Max) @ Id | 1.2V @ 8μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 228pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 1.5A Ta |
Gate Charge (Qg) (Max) @ Vgs | 5.7nC @ 4.5V |
Rise Time | 8.5ns |
Drain to Source Voltage (Vdss) | 20V |
Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
Vgs (Max) | ±12V |
Continuous Drain Current (ID) | 1.5A |
Gate to Source Voltage (Vgs) | 12V |
Max Dual Supply Voltage | -20V |
Length | 2mm |
Width | 1.25mm |
RoHS Status | ROHS3 Compliant |
Lead Free | Contains Lead |