BSV52LT1G
| Parameters | |
|---|---|
| Emitter Base Voltage (VEBO) | 1.2V |
| hFE Min | 25 |
| Height | 1.01mm |
| Length | 3.04mm |
| Width | 1.4mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 12V |
| Max Power Dissipation | 225mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 200mA |
| Frequency | 400MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | BSV52 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 300mW |
| Power - Max | 225mW |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 400MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 12V |
| Max Collector Current | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 10mA 1V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 50mA |
| Collector Emitter Breakdown Voltage | 12V |
| Transition Frequency | 400MHz |
| Collector Emitter Saturation Voltage | 400mV |
| Max Breakdown Voltage | 12V |
| Collector Base Voltage (VCBO) | 20V |
See Relate Datesheet
