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BSZ014NE2LS5IFATMA1

MOSFET N-CH 25V 31A 8TSDSON


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-BSZ014NE2LS5IFATMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 763
  • Description: MOSFET N-CH 25V 31A 8TSDSON (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series OptiMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PDSO-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.1W Ta 69W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.45m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2300pF @ 12V
Current - Continuous Drain (Id) @ 25°C 31A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V
Rise Time 3ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Continuous Drain Current (ID) 40A
Gate to Source Voltage (Vgs) 16V
Max Dual Supply Voltage 25V
Drain Current-Max (Abs) (ID) 31A
Drain-source On Resistance-Max 0.0021Ohm
Pulsed Drain Current-Max (IDM) 160A
FET Feature Schottky Diode (Body)
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet

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