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BSZ018NE2LSATMA1

Trans MOSFET N-CH 25V 23A 8-Pin TSDSON EP T/R


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-BSZ018NE2LSATMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 376
  • Description: Trans MOSFET N-CH 25V 23A 8-Pin TSDSON EP T/R (Kg)

Details

Tags

Parameters
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature ULTRA LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code S-PDSO-F3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.1W Ta 69W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.1W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.8m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2800pF @ 12V
Current - Continuous Drain (Id) @ 25°C 23A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V
Rise Time 4.4ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 23A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 25V
Drain-source On Resistance-Max 0.0024Ohm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Factory Lead Time 1 Week
Contact Plating Tin
Mount Surface Mount
See Relate Datesheet

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