Parameters | |
---|---|
Number of Terminations | 3 |
ECCN Code | EAR99 |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | NO LEAD |
Reach Compliance Code | not_compliant |
Pin Count | 8 |
JESD-30 Code | S-PDSO-N3 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 2.1W Ta 69W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.5W |
Case Connection | DRAIN |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 4.2m Ω @ 20A, 10V |
Vgs(th) (Max) @ Id | 2.8V @ 36μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 2000pF @ 30V |
Current - Continuous Drain (Id) @ 25°C | 17A Ta 40A Tc |
Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V |
Rise Time | 7ns |
Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
Vgs (Max) | ±20V |
Continuous Drain Current (ID) | 40A |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 60V |
Drain-source On Resistance-Max | 0.0042Ohm |
Feedback Cap-Max (Crss) | 44 pF |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Contains Lead |
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Cut Tape (CT) |
Published | 2006 |
Series | OptiMOS™ |
JESD-609 Code | e3 |
Pbfree Code | no |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |