banner_page

BSZ075N08NS5ATMA1

BSZ075N08NS5ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-BSZ075N08NS5ATMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 394
  • Description: BSZ075N08NS5ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series OptiMOS™
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PDSO-N3
Number of Elements 1
Power Dissipation-Max 69W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 69W
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.5m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 3.8V @ 36μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2080pF @ 40V
Current - Continuous Drain (Id) @ 25°C 40A Tc
Gate Charge (Qg) (Max) @ Vgs 29.5nC @ 10V
Rise Time 4ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 40A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 80V
Drain-source On Resistance-Max 0.0075Ohm
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good