Parameters | |
---|---|
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 8.6m Ω @ 20A, 10V |
Vgs(th) (Max) @ Id | 3.1V @ 105μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 4785pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 13.5A Ta 40A Tc |
Gate Charge (Qg) (Max) @ Vgs | 57.5nC @ 10V |
Rise Time | 46ns |
Drain to Source Voltage (Vdss) | 30V |
Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
Vgs (Max) | ±25V |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Fall Time (Typ) | 8 ns |
Mounting Type | Surface Mount |
Turn-Off Delay Time | 35 ns |
Continuous Drain Current (ID) | 13.5A |
Package / Case | 8-PowerTDFN |
Threshold Voltage | -2.5V |
Number of Pins | 8 |
Gate to Source Voltage (Vgs) | 25V |
Transistor Element Material | SILICON |
Max Dual Supply Voltage | -30V |
Drain to Source Breakdown Voltage | -30V |
Operating Temperature | -55°C~150°C TJ |
Height | 1.1mm |
Packaging | Tape & Reel (TR) |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Published | 2008 |
Lead Free | Contains Lead |
Series | OptiMOS™ |
JESD-609 Code | e3 |
Pbfree Code | no |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 5 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Additional Feature | ESD PROTECTED |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | NO LEAD |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | not_compliant |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 8 |
JESD-30 Code | S-PDSO-N5 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Number of Channels | 1 |
Power Dissipation-Max | 2.1W Ta 69W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 69W |
Case Connection | DRAIN |
Turn On Delay Time | 16 ns |
FET Type | P-Channel |