Parameters | |
---|---|
ECCN Code | EAR99 |
Gate to Source Voltage (Vgs) | 16V |
Technology | MOSFET (Metal Oxide) |
Max Dual Supply Voltage | 30V |
REACH SVHC | No SVHC |
Terminal Position | DUAL |
Terminal Form | NO LEAD |
RoHS Status | ROHS3 Compliant |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Lead Free | Contains Lead |
Reach Compliance Code | not_compliant |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 8 |
JESD-30 Code | S-PDSO-N5 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 2.1W Ta 30W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.1W |
Factory Lead Time | 1 Week |
Case Connection | DRAIN |
Contact Plating | Tin |
Mount | Surface Mount |
FET Type | N-Channel |
Mounting Type | Surface Mount |
Transistor Application | SWITCHING |
Package / Case | 8-PowerTDFN |
Number of Pins | 8 |
Rds On (Max) @ Id, Vgs | 9.1m Ω @ 20A, 10V |
Transistor Element Material | SILICON |
Vgs(th) (Max) @ Id | 2V @ 250μA |
Operating Temperature | -55°C~150°C TJ |
Halogen Free | Halogen Free |
Packaging | Tape & Reel (TR) |
Input Capacitance (Ciss) (Max) @ Vds | 1700pF @ 15V |
Published | 2005 |
Current - Continuous Drain (Id) @ 25°C | 10A Ta 40A Tc |
Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
Series | OptiMOS™ |
Rise Time | 2.8ns |
JESD-609 Code | e3 |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Pbfree Code | no |
Vgs (Max) | ±20V |
Part Status | Active |
Continuous Drain Current (ID) | 40A |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 5 |
Threshold Voltage | 2V |