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BSZ180P03NS3EGATMA1

BSZ180P03NS3EGXT


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-BSZ180P03NS3EGATMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 555
  • Description: BSZ180P03NS3EGXT (Kg)

Details

Tags

Parameters
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 39.5A
Threshold Voltage -2.5V
Gate to Source Voltage (Vgs) 25V
Max Dual Supply Voltage -30V
Drain Current-Max (Abs) (ID) 9A
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Factory Lead Time 1 Week
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Additional Feature ESD PROTECTED
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code S-PDSO-F5
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.1W Ta 40W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 40W
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 18m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 3.1V @ 48μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2220pF @ 15V
Current - Continuous Drain (Id) @ 25°C 9A Ta 39.5A Tc
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Rise Time 11ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±25V
Fall Time (Typ) 3 ns
See Relate Datesheet

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