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BSZ22DN20NS3GATMA1

Trans MOSFET N-CH 200V 7A


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-BSZ22DN20NS3GATMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 225
  • Description: Trans MOSFET N-CH 200V 7A (Kg)

Details

Tags

Parameters
Rds On (Max) @ Id, Vgs 225m Ω @ 3.5A, 10V
Vgs(th) (Max) @ Id 4V @ 13μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 430pF @ 100V
Current - Continuous Drain (Id) @ 25°C 7A Tc
Gate Charge (Qg) (Max) @ Vgs 5.6nC @ 10V
Rise Time 4ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 7A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 200V
Drain Current-Max (Abs) (ID) 7A
Drain-source On Resistance-Max 0.225Ohm
Avalanche Energy Rating (Eas) 30 mJ
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Lead Free Contains Lead
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code S-PDSO-N5
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 34W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 34W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
See Relate Datesheet

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