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BSZ300N15NS5ATMA1

MOSFET MV POWER MOS


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-BSZ300N15NS5ATMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 537
  • Description: MOSFET MV POWER MOS (Kg)

Details

Tags

Parameters
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 30m Ω @ 16A, 10V
Vgs(th) (Max) @ Id 4.6V @ 32μA
Input Capacitance (Ciss) (Max) @ Vds 950pF @ 75V
Current - Continuous Drain (Id) @ 25°C 32A Tc
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Drain to Source Voltage (Vdss) 150V
Drive Voltage (Max Rds On,Min Rds On) 8V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 32A
Drain-source On Resistance-Max 0.03Ohm
Pulsed Drain Current-Max (IDM) 128A
DS Breakdown Voltage-Min 150V
Avalanche Energy Rating (Eas) 30 mJ
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series OptiMOS™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Reach Compliance Code not_compliant
JESD-30 Code S-PDSO-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 62.5W Tc
See Relate Datesheet

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