Parameters | |
---|---|
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 30m Ω @ 16A, 10V |
Vgs(th) (Max) @ Id | 4.6V @ 32μA |
Input Capacitance (Ciss) (Max) @ Vds | 950pF @ 75V |
Current - Continuous Drain (Id) @ 25°C | 32A Tc |
Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V |
Drain to Source Voltage (Vdss) | 150V |
Drive Voltage (Max Rds On,Min Rds On) | 8V 10V |
Vgs (Max) | ±20V |
Drain Current-Max (Abs) (ID) | 32A |
Drain-source On Resistance-Max | 0.03Ohm |
Pulsed Drain Current-Max (IDM) | 128A |
DS Breakdown Voltage-Min | 150V |
Avalanche Energy Rating (Eas) | 30 mJ |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN |
Surface Mount | YES |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2015 |
Series | OptiMOS™ |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | NO LEAD |
Reach Compliance Code | not_compliant |
JESD-30 Code | S-PDSO-N3 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 62.5W Tc |