BTS244Z E3062A
| Parameters | |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | TO-263-5, D2Pak (4 Leads + Tab), TO-263BB |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 1999 |
| Series | TEMPFET® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| Additional Feature | AVALANCHE RATED |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Reference Standard | AEC-Q101 |
| JESD-30 Code | R-PSSO-G4 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR |
| Power Dissipation-Max | 170W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 13m Ω @ 19A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 130μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2660pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 35A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 130nC @ 10V |
| Drain to Source Voltage (Vdss) | 55V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Drain Current-Max (Abs) (ID) | 35A |
| Drain-source On Resistance-Max | 0.018Ohm |
| Pulsed Drain Current-Max (IDM) | 188A |
| DS Breakdown Voltage-Min | 55V |
| Avalanche Energy Rating (Eas) | 1650 mJ |
| FET Feature | Temperature Sensing Diode |
| RoHS Status | RoHS Compliant |
See Relate Datesheet
