Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-263-5, D2Pak (4 Leads + Tab), TO-263BB |
Number of Pins | 5 |
Supplier Device Package | PG-TO263-5-2 |
Weight | 1.59999g |
Operating Temperature | -40°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2003 |
Series | TEMPFET® |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Max Operating Temperature | 175°C |
Min Operating Temperature | -40°C |
Voltage - Rated DC | 55V |
Technology | MOSFET (Metal Oxide) |
Current Rating | 35A |
Number of Channels | 1 |
Power Dissipation-Max | 170W Tc |
Element Configuration | Single |
Power Dissipation | 170W |
Turn On Delay Time | 15 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 13mOhm @ 19A, 10V |
Vgs(th) (Max) @ Id | 2V @ 130μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 2660pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 35A Tc |
Gate Charge (Qg) (Max) @ Vgs | 130nC @ 10V |
Rise Time | 70ns |
Drain to Source Voltage (Vdss) | 55V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 25 ns |
Turn-Off Delay Time | 40 ns |
Continuous Drain Current (ID) | 35A |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 55V |
Drain to Source Breakdown Voltage | 55V |
Input Capacitance | 2.66nF |
FET Feature | Temperature Sensing Diode |
Drain to Source Resistance | 13mOhm |
Rds On Max | 13 mΩ |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Contains Lead |