Parameters | |
---|---|
Lifecycle Status | LAST SHIPMENTS (Last Updated: 2 weeks ago) |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Surface Mount | NO |
Number of Pins | 4 |
Transistor Element Material | SILICON |
Operating Temperature | -65°C~150°C TJ |
Packaging | Tube |
Published | 2011 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Additional Feature | BUILT-IN ANTISATURATION NETWORK |
Subcategory | Other Transistors |
Voltage - Rated DC | 350V |
Max Power Dissipation | 25W |
Terminal Form | THROUGH-HOLE |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 2A |
Time@Peak Reflow Temperature-Max (s) | 40 |
Base Part Number | BUD42 |
Pin Count | 4 |
JESD-30 Code | R-PSIP-T3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 25W |
Case Connection | COLLECTOR |
Transistor Application | SWITCHING |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 350V |
Max Collector Current | 4A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 2A 5V |
Current - Collector Cutoff (Max) | 100μA |
Vce Saturation (Max) @ Ib, Ic | 1V @ 500mA, 2A |
Collector Emitter Breakdown Voltage | 350V |
Collector Emitter Saturation Voltage | 200mV |
Collector Base Voltage (VCBO) | 650V |
Emitter Base Voltage (VEBO) | 9V |
hFE Min | 8 |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |