Parameters | |
---|---|
Transistor Type | NPN |
DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 2A 5V |
Current - Collector Cutoff (Max) | 100μA |
Vce Saturation (Max) @ Ib, Ic | 1V @ 500mA, 2A |
Voltage - Collector Emitter Breakdown (Max) | 350V |
Current - Collector (Ic) (Max) | 4A |
RoHS Status | ROHS3 Compliant |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Surface Mount | YES |
Transistor Element Material | SILICON |
Operating Temperature | -65°C~150°C TJ |
Packaging | Tube |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
Terminal Finish | MATTE TIN |
Additional Feature | BUILT-IN ANTISATURATION NETWORK |
Terminal Position | SINGLE |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 3 |
JESD-30 Code | R-PSSO-G2 |
Qualification Status | COMMERCIAL |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Case Connection | COLLECTOR |
Power - Max | 25W |
Transistor Application | SWITCHING |
Polarity/Channel Type | NPN |