banner_page

BUD42DT4G

BUD42DT4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-BUD42DT4G
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 980
  • Description: BUD42DT4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Collector Emitter Breakdown Voltage 350V
Max Frequency 1MHz
Collector Emitter Saturation Voltage 200mV
Collector Base Voltage (VCBO) 650V
Emitter Base Voltage (VEBO) 9V
hFE Min 8
Height 2.38mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature BUILT-IN ANTISATURATION NETWORK
Subcategory Other Transistors
Voltage - Rated DC 350V
Max Power Dissipation 25W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 2A
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BUD42
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 350V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 2A 5V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 1V @ 500mA, 2A
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good