BUK662R4-40C,118
| Parameters | |
|---|---|
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 263W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 263W |
| Case Connection | DRAIN |
| Turn On Delay Time | 33.5 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 2.3m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 11334pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 120A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 199nC @ 10V |
| Rise Time | 101ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±16V |
| Fall Time (Typ) | 186 ns |
| Turn-Off Delay Time | 369 ns |
| Continuous Drain Current (ID) | 120A |
| Gate to Source Voltage (Vgs) | 16V |
| Max Dual Supply Voltage | 40V |
| RoHS Status | Non-RoHS Compliant |
| Factory Lead Time | 1 Week |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2007 |
| Series | Automotive, AEC-Q101, TrenchMOS™ |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Reach Compliance Code | not_compliant |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
See Relate Datesheet
