Parameters | |
---|---|
Vgs (Max) | ±20V |
Published | 2001 |
Fall Time (Typ) | 45 ns |
Series | Automotive, AEC-Q101, TrenchMOS™ |
Turn-Off Delay Time | 48 ns |
JESD-609 Code | e3 |
Part Status | Active |
Continuous Drain Current (ID) | 83A |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
JEDEC-95 Code | TO-252AA |
ECCN Code | EAR99 |
Gate to Source Voltage (Vgs) | 20V |
Technology | MOSFET (Metal Oxide) |
Max Dual Supply Voltage | 55V |
Terminal Position | DUAL |
Drain Current-Max (Abs) (ID) | 75A |
Terminal Form | GULL WING |
Drain to Source Breakdown Voltage | 55V |
Pin Count | 3 |
Radiation Hardening | No |
Number of Elements | 1 |
RoHS Status | ROHS3 Compliant |
Power Dissipation-Max | 167W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Lead Free | Lead Free |
Power Dissipation | 167W |
Case Connection | DRAIN |
Turn On Delay Time | 18 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 12m Ω @ 25A, 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 2453pF @ 25V |
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Current - Continuous Drain (Id) @ 25°C | 75A Tc |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
Surface Mount | YES |
Rise Time | 91ns |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~185°C TJ |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Packaging | Tape & Reel (TR) |