Parameters | |
---|---|
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Surface Mount | NO |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2012 |
Series | Automotive, AEC-Q101, TrenchMOS™ |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | Tin (Sn) |
Additional Feature | AVALANCHE RATED |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Pin Count | 3 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 96W Tc |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
Turn On Delay Time | 11 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 7.4m Ω @ 20A, 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 1730pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 75A Tc |
Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V |
Rise Time | 9ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 9 ns |
Turn-Off Delay Time | 21 ns |
Continuous Drain Current (ID) | 75A |
JEDEC-95 Code | TO-220AB |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 40V |
Drain-source On Resistance-Max | 0.0074Ohm |
Avalanche Energy Rating (Eas) | 44 mJ |
RoHS Status | RoHS Compliant |