banner_page

BUK7613-100E,118

MOSFET N-CH 100V 72A D2PAK


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-BUK7613-100E,118
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 454
  • Description: MOSFET N-CH 100V 72A D2PAK (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Reach Compliance Code not_compliant
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 182W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 17.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 13m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 4533pF @ 20V
Current - Continuous Drain (Id) @ 25°C 72A Tc
Gate Charge (Qg) (Max) @ Vgs 97.2nC @ 10V
Rise Time 34ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 34.1 ns
Turn-Off Delay Time 44.8 ns
Continuous Drain Current (ID) 72A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 100V
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 288A
RoHS Status ROHS3 Compliant
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good