Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Surface Mount | YES |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2012 |
Series | Automotive, AEC-Q101, TrenchMOS™ |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
Terminal Finish | Tin (Sn) |
Additional Feature | AVALANCHE RATED |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Terminal Form | GULL WING |
Reach Compliance Code | not_compliant |
Pin Count | 3 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 349W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 357W |
Case Connection | DRAIN |
Turn On Delay Time | 42 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 1.6m Ω @ 25A, 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 11340pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 120A Tc |
Gate Charge (Qg) (Max) @ Vgs | 145nC @ 10V |
Rise Time | 60ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 83 ns |
Turn-Off Delay Time | 121 ns |
Continuous Drain Current (ID) | 120A |
Gate to Source Voltage (Vgs) | 4V |
Max Dual Supply Voltage | 40V |
Drain-source On Resistance-Max | 0.0016Ohm |
Drain to Source Breakdown Voltage | 40V |
Avalanche Energy Rating (Eas) | 1008 mJ |
RoHS Status | ROHS3 Compliant |