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BUK761R6-40E,118

MOSFET N-CH 40V 120A D2PAK


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-BUK761R6-40E,118
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 108
  • Description: MOSFET N-CH 40V 120A D2PAK (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Reach Compliance Code not_compliant
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 349W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 357W
Case Connection DRAIN
Turn On Delay Time 42 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.6m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 11340pF @ 25V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 145nC @ 10V
Rise Time 60ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 83 ns
Turn-Off Delay Time 121 ns
Continuous Drain Current (ID) 120A
Gate to Source Voltage (Vgs) 4V
Max Dual Supply Voltage 40V
Drain-source On Resistance-Max 0.0016Ohm
Drain to Source Breakdown Voltage 40V
Avalanche Energy Rating (Eas) 1008 mJ
RoHS Status ROHS3 Compliant
See Relate Datesheet

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