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BUK763R9-60E,118

MOSFET N-CH 60V 100A D2PAK


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-BUK763R9-60E,118
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 305
  • Description: MOSFET N-CH 60V 100A D2PAK (Kg)

Details

Tags

Parameters
Continuous Drain Current (ID) 100A
Mounting Type Surface Mount
Gate to Source Voltage (Vgs) 20V
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Number of Pins 3
Max Dual Supply Voltage 60V
Transistor Element Material SILICON
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 706A
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
RoHS Status ROHS3 Compliant
Published 2014
Series Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Reach Compliance Code not_compliant
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 263W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 263W
Case Connection DRAIN
Turn On Delay Time 25.3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.9m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 7480pF @ 25V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 103nC @ 10V
Rise Time 41.4ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 45 ns
Factory Lead Time 1 Week
Turn-Off Delay Time 62.7 ns
Contact Plating Tin
See Relate Datesheet

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