Parameters | |
---|---|
Input Capacitance (Ciss) (Max) @ Vds | 483pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 20.3A Tc |
Rise Time | 50ns |
Factory Lead Time | 1 Week |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Contact Plating | Tin |
Fall Time (Typ) | 40 ns |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Turn-Off Delay Time | 70 ns |
Continuous Drain Current (ID) | 2.9A |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Gate to Source Voltage (Vgs) | 20V |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Max Dual Supply Voltage | 55V |
Packaging | Tape & Reel (TR) |
Drain-source On Resistance-Max | 0.075Ohm |
Published | 2014 |
Drain to Source Breakdown Voltage | 55V |
Series | Automotive, AEC-Q101, TrenchMOS™ |
Pulsed Drain Current-Max (IDM) | 81A |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Radiation Hardening | No |
Number of Terminations | 2 |
RoHS Status | ROHS3 Compliant |
ECCN Code | EAR99 |
Lead Free | Lead Free |
HTS Code | 8541.29.00.75 |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Pin Count | 3 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Power Dissipation-Max | 62W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 62W |
Case Connection | DRAIN |
Turn On Delay Time | 10 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 75m Ω @ 10A, 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |