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BUK78150-55A,135

MOSFET N-CH 55V 5.5A SOT223


  • Manufacturer: NXP USA Inc.
  • Nocochips NO: 568-BUK78150-55A,135
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 739
  • Description: MOSFET N-CH 55V 5.5A SOT223 (Kg)

Details

Tags

Parameters
Power Dissipation-Max 8W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 150m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 230pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5.5A Tc
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 5.5A
Drain-source On Resistance-Max 0.15Ohm
Pulsed Drain Current-Max (IDM) 22A
DS Breakdown Voltage-Min 55V
Avalanche Energy Rating (Eas) 25 mJ
RoHS Status ROHS3 Compliant
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.75
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
JESD-30 Code R-PDSO-G4
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
See Relate Datesheet

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