Parameters | |
---|---|
Power Dissipation-Max | 8W Tc |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 150m Ω @ 5A, 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 230pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 5.5A Tc |
Drain to Source Voltage (Vdss) | 55V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Drain Current-Max (Abs) (ID) | 5.5A |
Drain-source On Resistance-Max | 0.15Ohm |
Pulsed Drain Current-Max (IDM) | 22A |
DS Breakdown Voltage-Min | 55V |
Avalanche Energy Rating (Eas) | 25 mJ |
RoHS Status | ROHS3 Compliant |
Mounting Type | Surface Mount |
Package / Case | TO-261-4, TO-261AA |
Surface Mount | YES |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2010 |
Series | Automotive, AEC-Q101, TrenchMOS™ |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
HTS Code | 8541.29.00.75 |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 4 |
JESD-30 Code | R-PDSO-G4 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |