BUK78150-55A/CUF
| Parameters | |
|---|---|
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 4 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 8W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 3 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 150m Ω @ 5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 230pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 5.5A Tc |
| Rise Time | 26ns |
| Drain to Source Voltage (Vdss) | 55V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 10 ns |
| Turn-Off Delay Time | 8 ns |
| Continuous Drain Current (ID) | 5.5A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.15Ohm |
| Pulsed Drain Current-Max (IDM) | 22A |
| DS Breakdown Voltage-Min | 55V |
| Avalanche Energy Rating (Eas) | 25 mJ |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2010 |
| Series | TrenchMOS™ |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
See Relate Datesheet
