banner_page

BUK7880-55/CUF

MOSFET N-CH 55V 7.5A SOT223


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-BUK7880-55/CUF
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 604
  • Description: MOSFET N-CH 55V 7.5A SOT223 (Kg)

Details

Tags

Parameters
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.5A Ta
Rise Time 15ns
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±16V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 3.5A
Gate to Source Voltage (Vgs) 16V
Drain Current-Max (Abs) (ID) 7.5A
Drain-source On Resistance-Max 0.08Ohm
DS Breakdown Voltage-Min 55V
Avalanche Energy Rating (Eas) 30 mJ
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 8.3W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 80m Ω @ 5A, 10V
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good