Parameters | |
---|---|
Vgs(th) (Max) @ Id | 4V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 500pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 3.5A Ta |
Rise Time | 15ns |
Drain to Source Voltage (Vdss) | 55V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±16V |
Fall Time (Typ) | 12 ns |
Turn-Off Delay Time | 18 ns |
Continuous Drain Current (ID) | 3.5A |
Gate to Source Voltage (Vgs) | 16V |
Drain Current-Max (Abs) (ID) | 7.5A |
Drain-source On Resistance-Max | 0.08Ohm |
DS Breakdown Voltage-Min | 55V |
Avalanche Energy Rating (Eas) | 30 mJ |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-261-4, TO-261AA |
Number of Pins | 4 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2016 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 4 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 8.3W Tc |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
Turn On Delay Time | 9 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 80m Ω @ 5A, 10V |