Parameters | |
---|---|
Gate Charge (Qg) (Max) @ Vgs | 117nC @ 10V |
Rise Time | 110ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 76 ns |
Turn-Off Delay Time | 151 ns |
Continuous Drain Current (ID) | 198A |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 40V |
Drain to Source Breakdown Voltage | 40V |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mounting Type | Through Hole |
Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA |
Number of Pins | 3 |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2010 |
Series | Automotive, AEC-Q101, TrenchMOS™ |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Technology | MOSFET (Metal Oxide) |
Pin Count | 3 |
Power Dissipation-Max | 300W Tc |
Element Configuration | Single |
Power Dissipation | 300W |
Turn On Delay Time | 33 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 4.5m Ω @ 25A, 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 5730pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 75A Tc |