Parameters | |
---|---|
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | not_compliant |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 8 |
JESD-30 Code | R-PSSO-G4 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Number of Channels | 1 |
Power Dissipation-Max | 62W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 62W |
Case Connection | DRAIN |
Turn On Delay Time | 5.7 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 10m Ω @ 15A, 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 1231pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 56A Tc |
Gate Charge (Qg) (Max) @ Vgs | 19.5nC @ 10V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Turn-Off Delay Time | 14.4 ns |
Continuous Drain Current (ID) | 56A |
Gate to Source Voltage (Vgs) | 20V |
Factory Lead Time | 1 Week |
Drain to Source Breakdown Voltage | 40V |
Pulsed Drain Current-Max (IDM) | 224A |
Mount | Surface Mount |
Avalanche Energy Rating (Eas) | 30.6 mJ |
Mounting Type | Surface Mount |
Max Junction Temperature (Tj) | 175°C |
Height | 900μm |
Package / Case | SOT-1210, 8-LFPAK33 |
RoHS Status | ROHS3 Compliant |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2016 |
Series | Automotive, AEC-Q101 |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
Terminal Finish | Matte Tin (Sn) |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Terminal Form | GULL WING |