Parameters | |
---|---|
Turn On Delay Time | 4 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 113m Ω @ 5A, 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 601pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 12A Tc |
Gate Charge (Qg) (Max) @ Vgs | 10.4nC @ 10V |
Rise Time | 5.9ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Factory Lead Time | 1 Week |
Mounting Type | Surface Mount |
Package / Case | SC-100, SOT-669 |
Fall Time (Typ) | 5.9 ns |
Surface Mount | YES |
Number of Pins | 4 |
Turn-Off Delay Time | 7.7 ns |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Continuous Drain Current (ID) | 12A |
Packaging | Tape & Reel (TR) |
Published | 2013 |
Series | TrenchMOS™ |
JEDEC-95 Code | MO-235 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Gate to Source Voltage (Vgs) | 20V |
Number of Terminations | 4 |
Additional Feature | AVALANCHE RATED |
Max Dual Supply Voltage | 100V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
RoHS Status | ROHS3 Compliant |
Terminal Form | GULL WING |
Pin Count | 4 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 45W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 45W |
Case Connection | DRAIN |