Parameters | |
---|---|
Power Dissipation | 65W |
Case Connection | DRAIN |
Turn On Delay Time | 6 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 12m Ω @ 15A, 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 1039pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 52A Tc |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
Rise Time | 7ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 6 ns |
Turn-Off Delay Time | 10 ns |
Continuous Drain Current (ID) | 52A |
JEDEC-95 Code | MO-235 |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 40V |
Drain to Source Breakdown Voltage | 40V |
Avalanche Energy Rating (Eas) | 22.75 mJ |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mounting Type | Surface Mount |
Package / Case | SC-100, SOT-669 |
Surface Mount | YES |
Number of Pins | 4 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2013 |
Series | TrenchMOS™ |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
Additional Feature | AVALANCHE RATED |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Reach Compliance Code | not_compliant |
Time@Peak Reflow Temperature-Max (s) | 30 |
Pin Count | 4 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 65W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |