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BUK7Y12-40EX

MOSFET N-CH 40V 52A LFPAK


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-BUK7Y12-40EX
  • Package: SC-100, SOT-669
  • Datasheet: PDF
  • Stock: 249
  • Description: MOSFET N-CH 40V 52A LFPAK (Kg)

Details

Tags

Parameters
Power Dissipation 65W
Case Connection DRAIN
Turn On Delay Time 6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 12m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1039pF @ 25V
Current - Continuous Drain (Id) @ 25°C 52A Tc
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Rise Time 7ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 10 ns
Continuous Drain Current (ID) 52A
JEDEC-95 Code MO-235
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 40V
Drain to Source Breakdown Voltage 40V
Avalanche Energy Rating (Eas) 22.75 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Contact Plating Tin
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchMOS™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 4
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 65W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
See Relate Datesheet

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