Parameters | |
---|---|
Number of Terminations | 4 |
Additional Feature | AVALANCHE RATED |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Terminal Form | GULL WING |
Pin Count | 4 |
Reference Standard | AEC-Q101; IEC-60134 |
JESD-30 Code | R-PSSO-G4 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 169W Tc |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Drain to Source Voltage (Vdss) | 100V |
Factory Lead Time | 1 Week |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Mount | Surface Mount |
JEDEC-95 Code | MO-235 |
Drain Current-Max (Abs) (ID) | 56A |
Mounting Type | Surface Mount |
Drain-source On Resistance-Max | 0.019Ohm |
Package / Case | SC-100, SOT-669 |
Pulsed Drain Current-Max (IDM) | 225A |
DS Breakdown Voltage-Min | 100V |
Transistor Element Material | SILICON |
Avalanche Energy Rating (Eas) | 94.3 mJ |
RoHS Status | ROHS3 Compliant |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2013 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |