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BUK7Y25-40B,115

MOSFET N-CH 40V 35.3A LFPAK


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-BUK7Y25-40B,115
  • Package: SC-100, SOT-669
  • Datasheet: PDF
  • Stock: 534
  • Description: MOSFET N-CH 40V 35.3A LFPAK (Kg)

Details

Tags

Parameters
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 693pF @ 25V
Current - Continuous Drain (Id) @ 25°C 35.3A Tc
Gate Charge (Qg) (Max) @ Vgs 12.1nC @ 10V
Rise Time 53ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) 35.3A
JEDEC-95 Code MO-235
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 40V
Drain-source On Resistance-Max 0.025Ohm
Drain to Source Breakdown Voltage 40V
Avalanche Energy Rating (Eas) 37 mJ
Factory Lead Time 1 Week
Radiation Hardening No
Contact Plating Tin
RoHS Status ROHS3 Compliant
Mounting Type Surface Mount
Lead Free Lead Free
Package / Case SC-100, SOT-669
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 59.4W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 59.4W
See Relate Datesheet

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