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BUK9212-55B,118

MOSFET N-CH 55V 75A DPAK


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-BUK9212-55B,118
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 679
  • Description: MOSFET N-CH 55V 75A DPAK (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~185°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 167W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 167W
Case Connection DRAIN
Turn On Delay Time 19 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 3519pF @ 25V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 32nC @ 5V
Rise Time 101ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±15V
Fall Time (Typ) 75 ns
Turn-Off Delay Time 96 ns
Continuous Drain Current (ID) 83A
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 15V
Max Dual Supply Voltage 55V
Drain Current-Max (Abs) (ID) 75A
Drain to Source Breakdown Voltage 55V
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet

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