Parameters | |
---|---|
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 114W Tc |
Operating Mode | ENHANCEMENT MODE |
Factory Lead Time | 1 Week |
Power Dissipation | 114W |
Contact Plating | Tin |
Mounting Type | Surface Mount |
Case Connection | DRAIN |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Turn On Delay Time | 45 ns |
Surface Mount | YES |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Number of Pins | 3 |
Rds On (Max) @ Id, Vgs | 17.6m Ω @ 25A, 10V |
Transistor Element Material | SILICON |
Vgs(th) (Max) @ Id | 2V @ 1mA |
Operating Temperature | -55°C~175°C TJ |
Input Capacitance (Ciss) (Max) @ Vds | 2920pF @ 25V |
Packaging | Tape & Reel (TR) |
Current - Continuous Drain (Id) @ 25°C | 55A Tc |
Published | 2010 |
Series | Automotive, AEC-Q101, TrenchMOS™ |
Rise Time | 130ns |
JESD-609 Code | e3 |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±10V |
Part Status | Active |
Fall Time (Typ) | 130 ns |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Turn-Off Delay Time | 400 ns |
Number of Terminations | 2 |
Continuous Drain Current (ID) | 55A |
Gate to Source Voltage (Vgs) | 10V |
ECCN Code | EAR99 |
Max Dual Supply Voltage | 55V |
HTS Code | 8541.29.00.75 |
Drain-source On Resistance-Max | 0.02Ohm |
Drain to Source Breakdown Voltage | 55V |
Technology | MOSFET (Metal Oxide) |
Pulsed Drain Current-Max (IDM) | 219A |
Terminal Position | SINGLE |
Avalanche Energy Rating (Eas) | 120 mJ |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
RoHS Status | ROHS3 Compliant |
Reach Compliance Code | not_compliant |
Lead Free | Lead Free |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 3 |
JESD-30 Code | R-PSSO-G2 |
Qualification Status | Not Qualified |