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BUK9226-75A,118

Single N-Channel 75 V 54.6 mOhm 114 W Silicon Surface Mount Mosfet - TO-252-3


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-BUK9226-75A,118
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 320
  • Description: Single N-Channel 75 V 54.6 mOhm 114 W Silicon Surface Mount Mosfet - TO-252-3 (Kg)

Details

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Parameters
Technology MOSFET (Metal Oxide)
Width 6.35mm
Terminal Form GULL WING
Radiation Hardening No
Peak Reflow Temperature (Cel) 260
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 114W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 114W
Case Connection DRAIN
Turn On Delay Time 24 ns
FET Type N-Channel
Transistor Application SWITCHING
Factory Lead Time 1 Week
Rds On (Max) @ Id, Vgs 24.6m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Contact Plating Tin
Input Capacitance (Ciss) (Max) @ Vds 3120pF @ 25V
Current - Continuous Drain (Id) @ 25°C 45A Tc
Mounting Type Surface Mount
Rise Time 141ns
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±10V
Surface Mount YES
Fall Time (Typ) 108 ns
Number of Pins 3
Weight 4.535924g
Turn-Off Delay Time 142 ns
Transistor Element Material SILICON
Continuous Drain Current (ID) 45A
Threshold Voltage 1.5V
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 10V
Published 2011
Series Automotive, AEC-Q101, TrenchMOS™
Max Dual Supply Voltage 75V
JESD-609 Code e3
Drain-source On Resistance-Max 0.029Ohm
Drain to Source Breakdown Voltage 75V
Part Status Active
Nominal Vgs 1.5 V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Height 6.35mm
Number of Terminations 2
Length 6.35mm
ECCN Code EAR99
See Relate Datesheet

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