Parameters | |
---|---|
Contact Plating | Tin |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Number of Pins | 3 |
Weight | 4.535924g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2011 |
Series | TrenchMOS™ |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Additional Feature | ESD PROTECTED |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Pin Count | 3 |
Number of Elements | 1 |
Power Dissipation-Max | 85W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 85W |
Case Connection | DRAIN |
Turn On Delay Time | 6 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 32m Ω @ 25A, 10V |
Vgs(th) (Max) @ Id | 2V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 1173pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 34A Tc |
Rise Time | 36ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±10V |
Fall Time (Typ) | 73 ns |
Turn-Off Delay Time | 96 ns |
Continuous Drain Current (ID) | 260mA |
JEDEC-95 Code | TO-220AB |
Gate to Source Voltage (Vgs) | 10V |
Max Dual Supply Voltage | 55V |
Drain to Source Breakdown Voltage | 55V |
Avalanche Energy Rating (Eas) | 49 mJ |
Height | 9.4mm |
Length | 10.3mm |
Width | 4.5mm |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |