BUK953R5-60E,127
| Parameters | |
|---|---|
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2012 |
| Series | Automotive, AEC-Q101, TrenchMOS™ |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | AVALANCHE RATED |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Reach Compliance Code | not_compliant |
| Pin Count | 3 |
| Reference Standard | AEC-Q101; IEC-60134 |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 293W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 3.4m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 13490pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 120A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 95nC @ 5V |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On,Min Rds On) | 5V 10V |
| Vgs (Max) | ±10V |
| JEDEC-95 Code | TO-220AB |
| Drain Current-Max (Abs) (ID) | 120A |
| Drain-source On Resistance-Max | 0.0037Ohm |
| Pulsed Drain Current-Max (IDM) | 758A |
| DS Breakdown Voltage-Min | 60V |
| Avalanche Energy Rating (Eas) | 404 mJ |
See Relate Datesheet
