BUK954R8-60E,127
| Parameters | |
|---|---|
| Input Capacitance (Ciss) (Max) @ Vds | 9710pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 100A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 65nC @ 5V |
| Rise Time | 73ns |
| Drive Voltage (Max Rds On,Min Rds On) | 5V 10V |
| Vgs (Max) | ±10V |
| Fall Time (Typ) | 68 ns |
| Turn-Off Delay Time | 78 ns |
| Continuous Drain Current (ID) | 100A |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 10V |
| Max Dual Supply Voltage | 60V |
| Drain-source On Resistance-Max | 0.0049Ohm |
| Pulsed Drain Current-Max (IDM) | 590A |
| RoHS Status | RoHS Compliant |
| Factory Lead Time | 1 Week |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Surface Mount | NO |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2012 |
| Series | Automotive, AEC-Q101, TrenchMOS™ |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | AVALANCHE RATED |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Pin Count | 3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 234W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 234W |
| Case Connection | DRAIN |
| Turn On Delay Time | 36 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 4.5m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 1mA |
See Relate Datesheet
