BUK9575-55A,127
| Parameters | |
|---|---|
| Turn On Delay Time | 10 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 68m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 643pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 20A Tc |
| Rise Time | 47ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±10V |
| Fall Time (Typ) | 33 ns |
| Turn-Off Delay Time | 28 ns |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 20A |
| Mounting Type | Through Hole |
| JEDEC-95 Code | TO-220AB |
| Package / Case | TO-220-3 |
| Gate to Source Voltage (Vgs) | 10V |
| Surface Mount | NO |
| Number of Pins | 3 |
| Max Dual Supply Voltage | 55V |
| Weight | 4.535924g |
| Drain to Source Breakdown Voltage | 55V |
| Transistor Element Material | SILICON |
| Avalanche Energy Rating (Eas) | 72 mJ |
| Operating Temperature | -55°C~175°C TJ |
| Height | 6.35mm |
| Packaging | Tube |
| Length | 6.35mm |
| Published | 2011 |
| Width | 6.35mm |
| Series | TrenchMOS™ |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Pin Count | 3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 62W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 62W |
| Case Connection | DRAIN |
See Relate Datesheet
