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BUK9615-100E,118

MOSFET N-CH 100V 66A D2PAK


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-BUK9615-100E,118
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 710
  • Description: MOSFET N-CH 100V 66A D2PAK (Kg)

Details

Tags

Parameters
Turn-Off Delay Time 77.6 ns
Continuous Drain Current (ID) 66A
Gate to Source Voltage (Vgs) 10V
Max Dual Supply Voltage 100V
Drain-source On Resistance-Max 0.015Ohm
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Number of Pins 3
Material Brass, Bronze
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Termination Crimp
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Reach Compliance Code not_compliant
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Plating Gold, Lead, Tin
Power Dissipation-Max 182W Tc
Wire Gauge (Max) 24 AWG
Wire Gauge (Min) 20 AWG
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 26.6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 14m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 6813pF @ 25V
Current - Continuous Drain (Id) @ 25°C 66A Tc
Gate Charge (Qg) (Max) @ Vgs 60nC @ 5V
Rise Time 62.2ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±10V
Fall Time (Typ) 59.1 ns
See Relate Datesheet

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