Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Surface Mount | YES |
Number of Pins | 3 |
Weight | 4.535924g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2011 |
Series | Automotive, AEC-Q101, TrenchMOS™ |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Terminal Form | GULL WING |
Pin Count | 3 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 54W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 54W |
Case Connection | DRAIN |
Turn On Delay Time | 9 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 173m Ω @ 5A, 10V |
Vgs(th) (Max) @ Id | 2V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 619pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 11A Tc |
Rise Time | 112ns |
Drive Voltage (Max Rds On,Min Rds On) | 5V 10V |
Vgs (Max) | ±15V |
Fall Time (Typ) | 25 ns |
Turn-Off Delay Time | 18 ns |
Continuous Drain Current (ID) | 11A |
Gate to Source Voltage (Vgs) | 15V |
Max Dual Supply Voltage | 100V |
Drain-source On Resistance-Max | 0.2Ohm |
Drain to Source Breakdown Voltage | 100V |
Pulsed Drain Current-Max (IDM) | 44A |
Height | 6.35mm |
Length | 6.35mm |
Width | 6.35mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |