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BUK962R8-60E,118

MOSFET N-CH 60V 120A D2PAK


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-BUK962R8-60E,118
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 261
  • Description: MOSFET N-CH 60V 120A D2PAK (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Number of Pins 3
Material Brass
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Termination Crimp
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Reach Compliance Code not_compliant
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Plating Gold, Tin
Power Dissipation-Max 324W Tc
Element Configuration Single
Wire Gauge (Max) 26 AWG
Wire Gauge (Min) 24 AWG
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 53 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.5m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 15600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 92nC @ 5V
Rise Time 88ns
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±10V
Fall Time (Typ) 81 ns
Turn-Off Delay Time 115 ns
Continuous Drain Current (ID) 120A
Gate to Source Voltage (Vgs) 15V
Max Dual Supply Voltage 60V
Drain-source On Resistance-Max 0.0028Ohm
Drain to Source Breakdown Voltage 60V
RoHS Status ROHS3 Compliant
See Relate Datesheet

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