Parameters | |
---|---|
Current - Continuous Drain (Id) @ 25°C | 34A Tc |
Rise Time | 36ns |
Drive Voltage (Max Rds On,Min Rds On) | 5V 10V |
Vgs (Max) | ±10V |
Factory Lead Time | 1 Week |
Fall Time (Typ) | 73 ns |
Contact Plating | Tin |
Turn-Off Delay Time | 96 ns |
Mounting Type | Surface Mount |
Continuous Drain Current (ID) | 34A |
Gate to Source Voltage (Vgs) | 10V |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Max Dual Supply Voltage | 55V |
Surface Mount | YES |
Number of Pins | 3 |
Drain to Source Breakdown Voltage | 55V |
Avalanche Energy Rating (Eas) | 48 mJ |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Radiation Hardening | No |
Packaging | Tape & Reel (TR) |
RoHS Status | ROHS3 Compliant |
Published | 2011 |
Series | Automotive, AEC-Q101, TrenchMOS™ |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 3 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Power Dissipation-Max | 85W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 85W |
Case Connection | DRAIN |
Turn On Delay Time | 6 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 32m Ω @ 25A, 10V |
Vgs(th) (Max) @ Id | 2V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 1173pF @ 25V |