banner_page

BUK963R1-40E,118

Mosfet N-ch 40V 100A D2PAK


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-BUK963R1-40E,118
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 643
  • Description: Mosfet N-ch 40V 100A D2PAK (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Number of Pins 3
Material Plastic
Weight 3.949996g
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Termination Crimp
Color Black
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Reach Compliance Code not_compliant
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 234W Tc
Element Configuration Single
Wire Gauge (Max) 18 AWG
Wire Gauge (Min) 14 AWG
Operating Mode ENHANCEMENT MODE
Power Dissipation 234W
Case Connection DRAIN
Turn On Delay Time 42 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.7m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 9150pF @ 25V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 69.5nC @ 5V
Rise Time 73ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±10V
Fall Time (Typ) 76 ns
Turn-Off Delay Time 114 ns
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 10V
Max Dual Supply Voltage 40V
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 794A
Diameter 39.878mm
Height 19.05mm
RoHS Status ROHS3 Compliant
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good