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BUK963R3-60E,118

MOSFET N-CH 60V 120A D2PAK


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-BUK963R3-60E,118
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 151
  • Description: MOSFET N-CH 60V 120A D2PAK (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Reach Compliance Code not_compliant
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 293W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 293W
Case Connection DRAIN
Turn On Delay Time 54 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 13490pF @ 25V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 95nC @ 5V
Rise Time 100ns
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±10V
Fall Time (Typ) 109 ns
Turn-Off Delay Time 158 ns
Continuous Drain Current (ID) 120A
Gate to Source Voltage (Vgs) 10V
Max Dual Supply Voltage 60V
Drain to Source Breakdown Voltage 60V
Avalanche Energy Rating (Eas) 404 mJ
RoHS Status ROHS3 Compliant
See Relate Datesheet

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