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BUK969R3-100E,118

Trans MOSFET N-CH 100V 100A 3-Pin(2+Tab) D2PAK T/R


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-BUK969R3-100E,118
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 656
  • Description: Trans MOSFET N-CH 100V 100A 3-Pin(2+Tab) D2PAK T/R (Kg)

Details

Tags

Parameters
Input Capacitance (Ciss) (Max) @ Vds 11650pF @ 25V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 94.3nC @ 5V
Rise Time 95.1ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±10V
Fall Time (Typ) 93.4 ns
Turn-Off Delay Time 118 ns
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 10V
Max Dual Supply Voltage 100V
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 405A
Avalanche Energy Rating (Eas) 219 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 245
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 263W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 263W
Case Connection DRAIN
Turn On Delay Time 39.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.9m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
See Relate Datesheet

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